ACTT12S-800CTN

AC Thyristor Triac power switch in a DPAK surface mountable plastic package with self-protective clamping capabilities against low and high energy transients. This "series CTN" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Features and Benefits
  • Clamping structure ensuring safe high over-voltage withstand capability
  • High junction operating temperature capability (Tj(max) = 150 °C)
  • High minimum IGT for guaranteed immunity to gate noise
  • Full cycle AC conduction
  • Over-voltage withstand capability to IEC 61000-4-5
  • Pin compatible with standard triacs
  • Planar passivated for voltage ruggedness and reliability
  • Protective self turn-on capability for high energy transients
  • Safe clamping capability for low energy over-voltage transients
  • Less sensitive gate for high noise immunity
  • Surface mountable package
  • Triggering in three quadrants only
  • Very high immunity to false turn-on by dV/dt and IEC 61000-4-4 fast transient
  • Package meets UL94V0 flammability requirement
  • Package is RoHS compliant
Applications
  • AC fan, pump and compressor controls
  • Highly inductive, resistive and safety loads
  • Large and small appliances (White Goods)
  • Reversing induction motor controls
  • Applications subject to high temperature (Tj(max) = 150 °C)
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
ACTT12S-800CTN VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 134 °C     12 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     120 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     132 A
Tj junction temperature   -40   150 °C
VPP peak pulse voltage Tj = 25 °C; non-repetitive, off-state     2 kV
IGT gate trigger current VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C 5   35 mA
VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C 5   35 mA
VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C 5   35 mA
IH holding current VD = 12 V; Tj = 25 °C     30 mA
VT on-state voltage IT = 17 A; Tj = 25 °C     1.5 V
VCL clamping voltage ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C 850     V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 2000     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A; dVcom/dt = 20 V/µs; gate open circuit; snubberless condition 12     A/ms
Datasheet
Chemical Content

Chemical Content - ACTT12S-800CTN

 

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All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.