Planar passivated AC Thyristor Triac power switch in a SOT428 (DPAK) surface mountable plastic package with self-protective clamping capabilities against low and high energy transients.
- Clamping structure ensuring safe high over-voltage withstand capability
- Direct interfacing with low power drivers and microcontrollers
- Full cycle AC conduction
- Less sensitive gate for high noise immunity
- Over-voltage withstand capability to IEC 61000-4-5
- Pin compatible with standard triacs
- Planar passivated for voltage ruggedness and reliability
- Protective self turn-on capability for high energy transients
- Safe clamping capability for low energy over-voltage transients
- Sensitive gate for easy logic level triggering
- Surface mountable package
- Triggering in three quadrants only
- Very high immunity to false turn-on by dV/dt
- AC fan, pump and compressor controls
- Highly inductive, resistive and safety loads
- Large and small appliances (White Goods)
- Reversing induction motor controls
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|---|
| ACTT4S-800C | VDRM | repetitive peak off-state voltage | 800 | V | |||
| IT(RMS) | RMS on-state current | full sine wave; Tmb ≤ 108 °C | 4 | A | |||
| ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 20 ms | 35 | A | |||
| full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 39 | A | |||||
| Tj | junction temperature | 125 | °C | ||||
| VPP | peak pulse voltage | Tj = 25 °C; non-repetitive, off-state | 2 | kV | |||
| IGT | gate trigger current | VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C | 35 | mA | |||
| VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C | 35 | mA | |||||
| VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C | 35 | mA | |||||
| IH | holding current | VD = 12 V; Tj = 25 °C | 35 | mA | |||
| VT | on-state voltage | IT = 6 A; Tj = 25 °C | 1.7 | V | |||
| VCL | clamping voltage | ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C | 850 | V | |||
| dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 1000 | V/µs | |||
| dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit | 8 | A/ms | |||
| VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A; dVcom/dt = 10 V/µs; gate open circuit | 10 | A/ms | |||||
| VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A; dVcom/dt = 1 V/µs; gate open circuit | 15 | A/ms |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| ACTT4S-800C |  TO252 |
Reel 13" Q1/T1 | Volume production | Standard Marking | ACTT4S-800C,118 | 9340 660 48118 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| ACTT4S-800C | 9340 660 48118 | ACTT4S-800C,118 | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| ACTT4S-800C | ACTT4S-800C,118 | ACTT4S-800C |   |
1 | 1 |
Chemical Content - ACTT4S-800C
As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
