ACTT6G-800E

AC Thyristor Triac power switch in a SOT226A (I2PAK) plastic package with self-protective clamping capabilities against low and high energy transients.

Features and Benefits
  • Clamping structure ensuring safe high over-voltage withstand capability
  • Direct interfacing with low power drivers and microcontrollers
  • Full cycle AC conduction
  • Over-voltage withstand capability to IEC 61000-4-5
  • Pin compatible with standard triacs
  • Planar passivated for voltage ruggedness and reliability
  • Protective self turn-on capability for high energy transients
  • Safe clamping capability for low energy over-voltage transients
  • Sensitive gate for easy logic level triggering
  • Triggering in three quadrants only
  • Very high immunity to false turn-on by dV/dt
Applications
  • AC fan, pump and compressor controls
  • Highly inductive, resistive and safety loads
  • Large and small appliances (White Goods)
  • Reversing induction motor controls
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
ACTT6G-800E VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 108 °C     6 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     56 A
full sine wave; Tj(init) = 25 °C; tp = 20 ms     51 A
Tj junction temperature       125 °C
VPP peak pulse voltage Tj = 25 °C; non-repetitive, off-state     2 kV
IGT gate trigger current VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C     10 mA
VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C     10 mA
VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C     10 mA
IH holding current VD = 12 V; Tj = 25 °C     25 mA
VT on-state voltage IT = 8 A; Tj = 25 °C     1.7 V
VCL clamping voltage ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C 850     V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 3.5     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A; dVcom/dt = 10 V/µs; gate open circuit 5     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A; dVcom/dt = 1 V/µs; gate open circuit 10     A/ms
Datasheet
Chemical Content

Chemical Content - ACTT6G-800E

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