BTA208S-600BT

Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable
plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can
occur. This "series B" triac will commutate the full rated RMS current at the maximum rated junction
temperature without the aid of a snubber

Features and Benefits
  • 3Q technology for improved noise immunity
  • High commutation capability with maximum false trigger immunity
  • High immunity to false turn-on by dV/dt
  • High blocking voltage capability
  • Less sensitive gate for very high noise immunity
  • Planar passivated for voltage ruggedness and reliability
  • Surface mountable package
  • Triggering in three quadrants only
Applications
  • Electronic thermostats
  • General purpose motor controls
  • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Parametric
Package
Quality, reliability & chemical content
Ordering

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
BTA208S-600BT VDRM  repetitive peak off-state voltage       600 V
IT(RMS)  RMS on-state current full sine wave; Tmb 124 °C;     8 A
ITSM  non-repetitive peak on-state  full sine wave; Tj(init) = 25 °C; tp = 20 ms;     65 A
 current full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     72 A
Tj  junction temperature       150 °C
IGT  gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+:Tj= 25 °C; 2   50 mA
VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 °C; 2   50 mA
VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 °C; 2   50 mA
IH  holding current VD = 12 V; Tj = 25 °C;     60 mA
VT  on-state voltage IT = 10 A; Tj = 25 °C;   1.33 1.60 V
dVD/dt  rate of rise of off-state voltage VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500     V/μs
VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1000     V/μs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; 
dV
com/dt = 20 V/µs; gate open circuit
5     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; 
dV
com/dt = 20 V/µs; gate open circuit
14     A/ms
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
BTA208S-600BT

TO252

BTA208S-600BT,REEL 13\" Q1/T1 *STANDARD MARK SMDVolume productionStandard MarkingBTA208S-600BT,1189340 740 36118
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
BTA208S-600BT9340 740 36118BTA208S-600BT,118NANA

申请瑞能样品之前,请先登录或者注册

Image CAPTCHA
Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
BTA208S-600BTBTA208S-600BT,118BTA208S-600BTLeaded  H

Chemical Content - BTA208S-600BT

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.