BTA308-800C0T

Planar passivated high commutation three quadrant triac in a TO220 plastic package. This triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dVD/dt as well as high dIcom/dt can occur. This "series C0T" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high operating capability (Tj(max) = 150 °C)

Features and Benefits
• 3Q technology for improved noise immunity
• High commutation capability with maximum false trigger immunity
• High junction operating temperature capability (Tj(max) = 150 °C)
• High immunity to false turn-on by dV/dt
• High voltage capability
• Less sensitive gate for very high noise immunity
• Planar passivated for voltage ruggedness and reliability
• Triggering in three quadrants only
Applications
• Applications subject to high temperature (Tj(max) = 150 °C)
• Compressor starting control circuits
• General purpose motor controls
• Reversing induction motor controls e.g. vertical axis washing machines
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ Max Unit
BTA308-800C0T VDRM repetitive peak offstate voltage       800 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 134 °C     8 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     60 A
non-repetitive peak forward current full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     65 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 5   35 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 5   35 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 5   35 mA
IH holding current VD = 12 V; Tj = 25 °C     50 mA
VT on-state voltage IT = 10 A; Tj = 25 °C   1.30 1.65 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 2000     V/μs
VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1500     V/μs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; 
dVcom/dt = 20 V/µs; (without snubber condition);
gate open circuit		 7     A/ms
Datasheet
Chemical Content

Chemical Content - BTA308-800C0T

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