BTA308B-800ET

Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plastic package. This triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dVD/dt as well as high dIcom/dt can occur. This "series C0T" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high operating capability (Tj(max) = 150 °C)

Features and Benefits
  • 3Q technology for improved noise immunity
  • High commutation capability with maximum false trigger immunity
  • High junction operating temperature capability (Tj(max) = 150 °C)
  • High immunity to false turn-on by dV/dt
  • High voltage capability
  • Less sensitive gate for very high noise immunity
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only
Applications
  • Applications subject to high temperature (Tj(max) = 150 °C)
  • Compressor starting control circuits
  • General purpose motor controls
  • Reversing induction motor controls e.g. vertical axis washing machines
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
BTA308B-800ET VDRM  repetitive peak off-state voltage       800 V
IT(RMS)  RMS on-state current full sine wave; Tmb ≤134 °C;     8 A
ITSM  non-repetitive peak on-state  full sine wave; Tj(init) = 25 °C; tp = 20 ms;     60 A
 current full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     65 A
Tj  junction temperature       150 °C
IGT  gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+:Tj= 25 °C;     10 mA
VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 °C;     10 mA
VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 °C;     10 mA
IH  holding current VD = 12 V; Tj = 25 °C;     30 mA
VT on-state voltage IT = 10 A; Tj = 25 °C;   1.30 1.65 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 400     V/μs
VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 200     V/μs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; 
dVcom/dt = 20 V/µs; gate open circuit		 3     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; 
dVcom/dt = 10 V/µs; gate open circuit		 4     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; 
dVcom/dt = 1 V/µs; gate open circuit		 6     A/ms
Datasheet
Chemical Content

Chemical Content - BTA308-800ET

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