BTA312B-800CT

Planar passivated high commutation three quadrant triac in a TO263 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required

Features and Benefits
  • 3Q technology for improved noise immunity
  • High commutation capability with maximum false trigger immunity
  • High immunity to false turn-on by dV/dt
  • High junction operating temperature capability
  • High voltage capability
  • Less sensitive gate for high noise immunity
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only
Applications
  • Applications subject to high temperature
  • Electronic thermostats (heating and cooling)
  • High power motor controls e.g. washing machines and vacuum cleaners
  • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
BTA312B-800CT VDRM  repetitive peak off-state voltage       800 V
IT(RMS)  RMS on-state current full sine wave; Tmb ≤ 125 °C;     12 A
ITSM  non-repetitive peak on-state
 current		 full sine wave; Tj(init) = 25 °C; tp = 20 ms;     100 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     110 A
Tj  junction temperature   -40   150 °C
IGT  gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+:Tj= 25 °C; 2   35 mA
VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 °C; 2   35 mA
VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 °C; 2   35 mA
IH  holding current VD = 12 V; Tj = 25 °C;     35 mA
VT  on-state voltage IT = 15 A; Tj = 25 °C;   1.3 1.6 V
dVD/dt  rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500     V/μs
VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 300     V/μs
dIcom/dt  rate of change of commutating
 current		 VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A; 
dVcom/dt = 20 V/µs; (snubberless condition);
gate open circuit		 8     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A; 
dVcom/dt = 10 V/µs; gate open circuit		 13     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A; 
dVcom/dt = 1 V/µs; gate open circuit		 20     A/ms
Datasheet
Chemical Content

Chemical Content - BTA312B-800CT

 

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All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.