Hyperfast power diode in a 2-lead TO220 plastic package.
- Low leakage current
- Low thermal resistance
- Low reverse recovery current
- Reduces switching losses in associated MOSFET or IGBT
- Active PFC in air conditioner/EV charger/PV
- Continuous Current Mode (CCM) Power Factor Correction (PFC)
- Half-bridge/full-bridge switched-mode power supplies
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
| BYC12M-650P | VRRM | repetitive peak reverse voltage | 650 | V | |||
| IF(AV) | average forward current | δ = 0.5; Tmb ≤ 121 °C; square-wave pulse | 12 | A | |||
| IFRM | repetitive peak forward current | δ = 0.5; tp = 25 µs; Tmb ≤ 121 °C; square-wave pulse | 24 | A | |||
| IFSM | non-repetitive peak forward current | tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse | 135 | A | |||
| tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse | 148 | A | |||||
| VF | forward voltage | IF = 12 A; Tj = 25 °C | 2.6 | 3.3 | V | ||
| IF = 12 A; Tj = 150 °C | 1.6 | 2.3 | V | ||||
| trr | reverse recovery time | IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C | 14 | ns | |||
| IF = 12 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 25 °C | 29 | ns | |||||
| IF = 12 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 125 °C | 50 | ns |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| BYC12M-650P |
TO220-2L | STANDARD MARK SMD | Volume production | Standard Marking | BYC12M-650PQ | 9340 731 93127 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| BYC12M-650P | 9340 731 93127 | BYC12M-650PQ | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| BYC12M-650P | BYC12M-650PQ | BYC12M-650P | 
 |
Chemical Content - BYC12M-650P
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
