TYN30B-600TF
Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 (D2PAK) surface mountable plastic package intended for use in applications applications requiring good bidirectional blocking voltage and high surge current capability and high junction temperature capability (Tj(max) = 150 °C)
Features and Benefits
- High junction operating temperature capability (Tj(max) = 150 °C)
- High bidirectional blocking voltage capability
- Very high current surge capability
- High thermal cycling performance
- Planar passivated for voltage ruggedness and reliability
Applications
- Capacitive Discharge Ignition (CDI)
- Crowbar protection
- Inrush protection
- Motor control
- Voltage regulation
Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
TYN30B-600TF | VDRM | repetitive peak off-state voltage | 600 | V | |||
IT(RMS) | RMS on-state current | half sine wave; Tmb ≤ 132 °C | 30 | A | |||
ITSM | non-repetitive peak on-state current |
half sine wave; Tj(init) = 25 °C; tp = 10 ms | 360 | A | |||
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 396 | A | |||||
Tj | junction temperature | 150 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 5 | 10 | mA | ||
IH | holding current | VD = 12 V; Tj = 25 °C | 40 | mA | |||
VT | on-state voltage | IT = 30 A; Tj = 25 °C | 1.50 | V | |||
dVD/dt | rate of rise of off-state voltage | VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 500 | V/µs |