WAT120TBS16
Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
Features and Benefits
- Planar passivated thyristor chips for voltage ruggedness and reliability
- Top-side cooling
- Compact design
- One screw mounting
- Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DBC)
- Package is RoHS compliant
Applications
- Soft starters
- UPS
- Temperature control
- Lighting control
- AC power control
Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
WAT120TBS16 | VDRM | repetitive peak off-state voltage | 1600 | V | |||
VRRM | repetitive peak reverse voltage | 1600 | V | ||||
IT(RMS) | RMS on-state current | half sine wave | 134 | A | |||
ITSM | non-repetitive peak on-state current |
half sine wave; Tj(init) = 25 °C; tp = 10 ms | 2000 | A | |||
half sine wave; Tj(init) = 150 °C; tp = 10 ms | 1800 | A | |||||
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 2200 | A | |||||
half sine wave; Tj(init) = 150 °C; tp = 8.3 ms | 1870 | A | |||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 30 | 100 | mA | ||
VGT | gate trigge voltage | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 1.50 | V | |||
VT | on-state voltage | IT = 240 A; Tj = 25 °C | 1.70 | V |