WB25SC120AL

Silicon Carbide Schottky diode (Bare Die).

Features and Benefits
  • Extremely fast reverse recovery time
  • Low figure of merit (Qr*VF)
  • Highly stable switching performance
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ Max Unit
WB25SC120AL VRRM* repetitive peak off-state voltage    -  - 1200 V
IF(AV)** average forward current δ = 0.5; square-wave pulse  -  - 25 A
VF** forward voltage IF = 25 A; Tj = 150 °C  - 1.9 2.3 V
Qrr** reverse recovery time IF = 25 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C  - 54  - nC

Chemical Content -

Disclaimer

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