Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)
- Low on-resistance
- Fast switching speed
- 0V turn-off gate voltage for simple gate drive
- Easy to parallel
- Controllable dV/dt for optimized EMI
- Reduced cooling requirements
- RoHS compliant
| Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| WBxx060SCM120CGAN | VDS | drain-source voltage | 25 °C ≤ Tj ≤ 175 °C | 1200 | V | ||
| ID | drain current | VGS = 18 V; Tmb = 25 °C | 61 | A | |||
| Ptot | total power dissipation | Tmb = 25 °C | 417 | W | |||
| Tj | junction temperature | -55 | 175 | °C | |||
| RDS(on) | drain-source on-state resistance | VGS = 15 V; ID = 25 A; Tj = 25 °C | 60 | mΩ | |||
| QG(tot) | total gate charge | ID = 25 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C | 83 | nC | |||
| QGD | gate-drain charge | 15 | nC | ||||
| Qr | recovered charge | ISD = 25 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C | 64 | nC |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| WB060SCM120CGAN |
NAU000 |
Volume production | Standard Marking | WB060SCM120CGAN6Z | 9340 734 77006 | |
| WBSF060SCM120CGAN | WBSF060SCM120CGAN6V | 9340 735 10005 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| WB060SCM120CGAN | 9340 734 77006 | WB060SCM120CGAN6Z | NA | NA | |
| WBSF060SCM120CGAN | 9340 735 10005 | WBSF060SCM120CGAN6V |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| WB060SCM120CGAN | WB060SCM120CGAN6Z | WB060SCM120CGAN |   |
always Pb-free | ||
| WBSF060SCM120CGAN | WBSF060SCM120CGAN6V | WBSF060SCM120CGAN |
Chemical Content -WBxx060SCM120CGAN
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
