WCR03-12WM

Planar passivated SCR with sensitive gate in surface mountable plastic package and through-hole package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Features and Benefits
  • On-state RMS current, 1.25 A
  • Repetitive peak off-state voltage, 1250 V
  • High surge current capability
  • Direct triggering from low power drivers and logic ICs
  • Planar passivated for voltage ruggedness and reliability
  • Through-hole package (TO92)
Applications
  • GFCI (Ground Fault Circuit Interrupter)
  • AFCI (Arc Fault Circuit Interrupter)
  • RCD (Residual Current Device)
  • RCBO (Residual Current circuit Breaker with Overload protection)
  • AFDD (Arc Fault Detection Device)
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WCR03-12WM VDRM  repetitive peak off-state voltage       1250 V
VRRM  repetitive peak reverse voltage       1250 V
IT(AV)  average on-state current  half sine wave; Tc ≤ 110 °C     0.8 A
IT(RMS)  RMS on-state current  half sine wave; Tc ≤ 110 °C     1.25 A
ITSM  non-repetitive peak on-state 
 current		  half sine wave; Tj(init) = 25 °C; tp = 10 ms     20 A
 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms     22 A
Tj  junction temperature       125 °C
IGT  gate trigger current  VD = 12 V; RL = 100 Ω; Tj = 25 °C 10   90 μA
IL  latching current  IT = 0.1 A; RGK = 1 kΩ; Tj = 25 °C     6 mA
IH  holding current  VD = 12 V; RGK = 1 kΩ; Tj = 25 °C     5 mA
dVD/dt  rate of rise of off-state voltage  VDM = 838 V; Tj = 125 °C; RGK = 1 kΩ ; (VDM = 
 67% of VDRM); exponential waveform		 200     V/µs
Datasheet
Chemical Content

Chemical Content -

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.