WG30N65MF1

WG30N65MF1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO-220AB package to provide extremely low Vce(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology.

Features and Benefits
  • Maximum junction temperature 175 °C
  • Positive Temperature efficient for easy paralleling
  • Very soft, fast recovery anti-parallel diode
  • Smooth & Optimized switching
  • EMI Improved Design
Applications
  • PFC
  • Solar converters
  • UPS
  • Welding Converters
  • Mid to high range switching frequency converters
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ Max Unit
WG30N65MF1 VCE  collector-emitter voltage  Tj ≥ 25 °C     650 V
IC  collector current  limited by Tj(max); TC = 100 °C     30 A
VCE(sat)  collector-emitter saturation voltage  VGE = 15 V; IC = 30 A; Tj = 25 °C   1.6 2.1 V
Datasheet
Chemical Content

 

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.