WG50N65LAW1

WG50N65LAW1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO247 package to provide extremely low VCE(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology.

Features and Benefits
  • Maximum junction temperature 175 °C
  • Positive Temperature efficient for easy paralleling
  • Very soft, fast recovery anti-parallel diode
  • Low saturation Voltage VCE(sat) = 1.3 V(Typ.) @ IC = 50 A
  • EMI Improved Design
Applications
  • Solar converters
  • UPS, ESS
  • PFC
  • Converters
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WG50N65LAW1 VCE  collector-emitter voltage       650 V
IC  collector current  TC = 25 °C     100 A
IF  diode forward current  TC = 25 °C     60 A
VCE(sat)  collector-emitter saturation voltage  VGE = 15 V; IC = 50 A; Tj = 25 °C   1.3 1.55 V
VF  diode forward voltage  VGE = 0 V; IF = 30 A; Tj = 25 °C   1.9   V
VGE(th)  gate-emitter threhold voltage  IC = 0.5 mA; VCE = VGE 4 5 6 V
Qg  gate charge  VCC = 520 V; IC = 50 A; VGE = 15 V; Tj = 25 °C   237   nC
Eon  turn-on energy  Tj = 25 °C; VCC = 400 V; IC = 50 A; VGE = 15V / 0V; RG = 10 Ω   1.18   mJ
Eoff  turn-off energy   1.12   mJ
Qr  reverse recovery charge  Tj = 25 °C; VR = 400 V; IF = 30 A; dIF/dt = 500 A/us   221   nC
Datasheet
Chemical Content

Chemical Content - WG50N65LAW1

 

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