WMS30N030

WMS30N030 is a high performance logic level N-channel MOSFET in TO220 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.

Features and Benefits
  • Advance High Cell Density Trench Technology
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Switching Losses
  • Optimized Gate Charge to Minimize Driver Losses
  • 100% UIS Tested
  • RoHS Compliant and Halogen Free
Applications
  • DC−DC Converters
  • BLDC Motor Control
  • Load Switch
  • UPS
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ Max Unit
WMS30N030 VDS  drain-source voltage       30 V
VGS  gate-source voltage       ±20 V
ID  drain current  VGS = 10 V; Tmb = 25 °C     152 A
Ptot  total power dissipation  Tmb = 25 °C     114 W
Tj  junction temperature   -55   150 °C
RDS(on)  drain-source on-state resistance  VGS = 10 V; ID = 20 A   2.5 3.0 mΩ
 VGS = 4.5 V; ID = 20 A   3.2 4.0 mΩ
QG(tot)  total gate charge  ID = 20 A; VDS = 15 V; VGS = 10 V   146   nC
Datasheet
Chemical Content

 

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.