WMS30N140E
WMS30N140E is a high performance logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.
Features and Benefits
- High ESD sensitivity devices
- Advance High Cell Density Trench Technology
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Switching Losses
- Optimized Gate Charge to Minimize Driver Losses
- 100% UIS Tested
- RoHS Compliant, Halogen Free and Lead Free
Applications
- DC−DC Converters
- BLDC Motor Control
- Load Switch
- Lithium-ion Battery Protection
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
WMS30N140E | VDS | drain-source voltage | 30 | V | |||
VGS | gate-source voltage | ±20 | V | ||||
ID | drain current | VGS = 10 V; Tmb = 25 °C | 30 | A | |||
Ptot | total power dissipation | Tmb = 25 °C | 19 | W | |||
Tj | junction temperature | -55 | 150 | °C | |||
RDS(on) | drain-source on-state resistance | VGS = 10 V; ID = 16 A | 10 | 14 | mΩ | ||
VGS = 4.5 V; ID = 5 A | 16 | 21 | mΩ | ||||
QG(tot) | total gate charge | ID = 16 A; VDS = 15 V; VGS = 10 V | 16 | nC |