WMS30N300SK
WMS30N300SK is a high performance super logic level N-channel MOSFET in SOT23 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.
Features and Benefits
- Advance High Cell Density Trench Technology
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Switching Losses
- Optimized Gate Charge to Minimize Driver Losses
- RoHS Compliant, Halogen Free and Lead Free
Applications
- Load Switch
- General PWM Applications
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
WMS30N300SK | VDS | drain-source voltage | 30 | V | |||
VGS | gate-source voltage | ±12 | V | ||||
ID | drain current | VGS = 4.5 V; Tmb = 25 °C | 5.4 | A | |||
Ptot | total power dissipation | Tmb = 25 °C | 1.4 | W | |||
Tj | junction temperature | -55 | 150 | °C | |||
RDS(on) | drain-source on-state resistance | VGS = 4.5 V; ID = 5.4 A | 20 | 30 | mΩ | ||
VGS = 2.5 V; ID = 3 A | 28 | 45 | mΩ | ||||
QG(tot) | total gate charge | ID = 5.4 A; VDS = 15 V; VGS = 4.5 V | 8.1 | nC |