WMSC008H12B2P

WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type. Integrated with NTC temperature sensor.

Features and Benefits
  • Half bridge topology
  • Press-fit pin configuration
  • Low RDSon-Tj coefficient
  • Low Switching Losses
  • Low Qg and Crss
  • Mimimized circuit impedance
  • Improved chip synchronization performance
Applications
  • Power inverters
  • AC-DC converters
  • DC-DC converters
  • Active power factor correctors
  • Motor drivers

 

Parametric
Package
Quality, reliability & chemical content
Ordering

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
WMSC008H12B2P VDS  drain-source voltage       1200 V
ID  drain current  VGS = 18 V; Th = 25 °C     157 A
Ptot  total power dissipation  Th = 25 °C     272 W
Tj  junction temperature   -40   150 °C
RDS(on)  drain-source on-state  resistance  VGS = 15 V; ID = 150 A; Tj = 25 °C   8.0  
QG(tot)  total gate charge  ID = 150 A; VDS = 800 V; VGS = -0 V/18 V;  Tj = 25 °C   536   nC
QGD  gate-drain charge   102   nC
Qr  recovered charge  ISD = 150 A; VGS = -4 V/18V; VR = 600 V; di/dt = 2700 A/μs;   928   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WMSC008H12B2P

WeEnPACK-B2

WMSC008H12B2P,STANDARD MARKING*TRAY PACK,EPE OR BLISTERVolume productionStandard MarkingWMSC008H12B2P6T9340 741 21300
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WMSC008H12B2P9340 741 21300WMSC008H12B2P6TNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WMSC008H12B2PWMSC008H12B2P6TWMSC008H12B2PLeaded  E

Chemical Content - WMSC008H12B2P

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.