WMSC020S12B1P
WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Press-fit pin type.
NTC temperature sensor inside.
Features and Benefits
- 3-phase full bridge topology
- Press-fit pin configuration
- Low ON resistance
- Low switching losses
- Reduced Qg and Crss
- Minimized circuit impedance
- Robust product design
Applications
- EV chargers
- Energy storage and solar energy systems
- Power Inverters
- AC/DC converters
- Power factor correctors
- Motor drives
Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
WMSC020S12B1P | VDS | drain-source voltage | 1200 | V | |||
ID | drain current | VGS = 18 V; Th = 25 °C | 59 | A | |||
Ptot | total power dissipation | Th = 25 °C | 91 | W | |||
Tj | junction temperature | -40 | 150 | °C | |||
RDS(on) | drain-source on-state resistance | VGS = 15 V; ID = 50 A; Tj = 25 °C | 20 | mΩ | |||
QG(tot) | total gate charge | ID = 50 A; VDS = 800 V; VGS = -4 V/18 V; Tj = 25 °C |
215 | nC | |||
QGD | gate-drain charge | 32 | nC | ||||
Qr | recovered charge | ISD = 50 A; VGS = -4 V/18 V; VR = 600 V; di/dt = 2300 A/μs; RG(ext) = 5.1 Ω; Tj = 25°C |
1072 | nC | |||