WMSC040F12B1P-B
WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type.
Integrated with NTC temperature sensor.
Features and Benefits
- H Bridge topology
- Press-fit pin type
- Low RDSon
- Low Switching Losses
- Low Qg and Crss
- Low Inductive Design
Applications
- Power inverters
- AC-DC converters
- Active power factor correctors
- Motor drives
Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
WMSC040F12B1P-B | VDS | drain-source voltage | Tj = 25 °C | 1200 | V | ||
ID | drain current | VGS = 18 V; Th = 25 °C | 38 | A | |||
Ptot | total power dissipation | Th = 25 °C | 74 | W | |||
RDS(on) | drain-source on-state resistance | VGS = 15 V; ID = 33 A; Tj = 25 °C | 40 | mΩ | |||
QG(tot) | total gate charge | ID = 33 A; VDS = 800 V; VGS = -0 V/18 V; Tj = 25 °C |
115 | nC | |||
QGD | gate-drain charge | 18 | nC | ||||
Qr | recovered charge | ISD = 33 A; VGS = -4 V/18V; VR = 600 V; di/dt = 3400 A/μs; RG(ext) = 5.1 Ω; Tj = 25 °C |
465 | nC |