WN3S3060CB

Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a TO263 plastic package.

Features and Benefits
  • Trench structure
  • High junction temperature up to 150°C
  • Low forward voltage drop, negligible switching losses
  • High efficiency
Applications
  • DC to DC converters
  • Freewheeling diode
  • OR-ing diode
  • Switched mode power supply rectifier
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WN3S3060CB VRRM  repetitive peak reverse voltage       60 V
IF(AV)  average forward current  δ = 0.5; square-wave pulse; Tmb ≤ 116 °C; per diode     15 A
IO(AV)  average output current  δ = 0.5; square-wave pulse; Tmb ≤ 110 °C; both diodes conducting     30 A
VF  forward voltage  IF = 15 A; Tj = 25 °C; per diode   0.62 0.7 V
 IF = 15 A; Tj = 125 °C; per diode   0.61   V
IR  reverse current  VR = 60 V; Tj = 25 °C; per diode   35 100 µA
 VR = 60 V; Tj = 125 °C; per diode   20   mA
Datasheet
Chemical Content

Chemical Content - WN3S3060CB

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.