WNB2560M

Thin-SIP Package GBJ bridge rectifier.

Features and Benefits
  • Thin-SIP
  • Low forward voltage drop
  • High voltage capability
  • High inrush current capability
  • High operating temperature capability (Tj (max) = 150°C)
  • UL Recognition file # E346397
Applications
  • Power supplies
  • Rectifiers for DC motor field supplies
  • Battery charger rectifiers
  • Inverter
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNB2560M VRRM  repetitive peak reverse voltage       600 V
IF(AV)  average forward current  δ = 0.5; Tc ≤ 127 °C; square-wave pulse; per diode     25 A
IFSM  non-repetitive peak forward current  tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse     300 A
 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse     330 A
VF  forward voltage  IF = 12.5 A; Tj = 25 °C; per diode   0.87 0.92 V
 IF = 12.5 A; Tj = 150 °C; per diode   0.72 0.84 V
Datasheet
Chemical Content

Chemical Content - WNB2560M

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.