WNSC2D06650T
Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency switched-mode power supplies.
Features and Benefits
- Highly stable switching performance
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS compliant
Applications
- Power factor correction
- Telecom/Server SMPS
- UPS
- PV inverter
- PC Silverbox
- LED/OLED TV
- Motor Drives
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
WNSC2D06650T | VRRM | - | - | 650 | V | ||
IF(AV) | average forward current | δ = 0.5 ; Tc ≤ 142 °C; square-wave pulse; | - | - | 6 | A | |
Tj | junction temperature | - | - | 175 | °C | ||
VF | forward voltage | IF = 6 A; Tj = 25 °C; | - | 1.5 | 1.7 | V | |
Qr | recovered charge | IF = 6 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; | - | 9.5 | - | nC |