WNSC2D101200-A
Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency switching mode power supplies.
Features and Benefits
- Highly stable switching performance
- High forward surge capability IFSM
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS compliant
- High junction operating temperature capability (Tj(max) = 175 °C)
- AEC-Q101 qualified
Applications
- EV On Board Chargers
- EV DC-DC converters
- Other EV HV systems
Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
WNSC2D101200-A | VRRM | repetitive peak reverse voltage | 1200 | V | |||
IF | continuous forward current | Tmb ≤ 151 °C; DC | 10 | A | |||
Tj | junction temperature | -55 | 175 | °C | |||
VF | forward voltage | IF = 10 A; Tj = 25 °C | 1.42 | 1.60 | V | ||
IF = 10 A; Tj = 150 °C | 1.90 | 2.30 | V | ||||
Qr | reverse charge | IF = 10 A; dIF/dt = 500 A/µs; VR = 400 V; Tj = 25 °C | 22 | nC |