WNSC2D10650W
Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switched-mode power supplies.
Features and Benefits
- Highly stable switching performance
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS compliant
Applications
- Power factor correction
- Telecom / Server SMPS
- UPS
- PV inverter
- PC Silverbox
- LED / OLED TV
- Motor Drives
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
WNSC2D10650W | VRRM | repetitive peak reverse voltage | 650 | V | |||
IF(AV) | average forward current | δ = 0.5 ; Tmb ≤85 °C; square-wave pulse | 10 | A | |||
Tj | junction temperature | 175 | °C | ||||
VF | forward voltage | IF = 10A; Tj = 25 °C | 1.5 | 1.7 | V | ||
IF = 10 A; Tj = 150 °C | 1.8 | 2.2 | V | ||||
Qr | recovered charge | IF = 10 A; dIF/dt = 500 A/µs; VR = 400 V; Tj = 25 °C | 14 | nC |