WNSC2D201200CW
Dual Silicon Carbide Schottky diode in a 3-lead TO247 plastic package, designed for high frequency switched-mode power supplies.
Features and Benefits
- Highly stable switching performance
- High forward surge capability IFSM
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS compliant
- High junction operating temperature capability (Tj(max) = 175 °C)
Applications
- Power factor correction
- Telecom / Server SMPS
- UPS
- PV inverter
- PC Silverbox
- LED / OLED TV
- Motor Drives
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
WNSC2D201200CW | VRRM | repetitive peak reverse voltage | 1200 | V | |||
IO | limiting average forward current | Tmb ≤ 153 °C; both diodes | 20 | A | |||
Tj | junction temperature | -55 | 175 | °C | |||
VF | forward voltage | IF = 10 A; Tj = 25 °C; per diode | 1.42 | 1.60 | V | ||
Qr | reverse charge | IF = 10 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; per diode | 22 | nC |