WNSC2D301200CW
Dual Silicon Carbide Schottky diode in a TO247-3L plastic package, designed for high frequency switched-mode power supplies.
Features and Benefits
- Highly stable switching performance
- High forward surge capability IFSM
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS compliant
- High junction operating temperature capability (Tj(max) = 175 °C)
Applications
- Switching mode power supplies
- UPS & energy storage systems
- PV inverter and MPPT circuit
- Battery formation systems
- EV chargers
- Motor Drives
Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
WNSC2D301200CW | VRRM | repetitive peak reverse voltage | 1200 | V | |||
IO | continuous forward current | Tmb ≤ 141 °C; DC; both diodes | 30 | A | |||
Tj | junction temperature | -55 | 175 | °C | |||
VF | forward voltage | IF = 15 A; Tj = 25 °C; per diode | 1.42 | 1.60 | V | ||
IF = 15 A; Tj = 150 °C; per diode | 1.90 | 2.30 | V | ||||
Qr | reverse charge | IF = 15 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; per diode |
36 | nC |