Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switched-mode power supplies.
- Highly stable switching performance
- High forward surge capability IFSM
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS compliant
- High junction operating temperature capability (Tj(max) = 175 °C)
- Power factor correction
- UPS & energy storage systems
- PV MPPT circuit
- 3-level rectifier and inverters
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
| WNSC2D501200W | VRRM | repetitive peak reverse voltage | 1200 | V | |||
| IF(AV) | average forward current | Tmb ≤ 126 °C; DC | 50 | A | |||
| Tj | junction temperature | -55 | 175 | °C | |||
| VF | forward voltage | IF = 50 A; Tj = 25 °C | 1.42 | 1.6 | V | ||
| Qr | reverse charge | IF = 50 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C | 125 | nC |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| WNSC2D501200W |
TO247-2L |
HORIZONTAL, RAIL PACK | Volume production | Standard Marking | WNSC2D501200W6Q | 9340 730 07127 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| WNSC2D501200W | 9340 730 07127 | WNSC2D501200W6Q | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| WNSC2D501200W | WNSC2D501200W6Q | WNSC2D501200W |   |
always Pb-free | NA |
Chemical Content - WNSC2D501200W
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
