Silicon Carbide MOSFET in a 3-lead TO3PF plastic package, designed for high frequency, high efficiency systems.
- Optimized for fly-back topologies
- 15V/0V gate-source voltage compatible with fly-back controllers
- 100% UIS Tested
- Controllable dV/dt for optimized EMI
- Reduced cooling requirements
- Enlarge creepage distance
- RoHS compliant
- Auxiliary Power Supplies
- Switch Mode Power Supplies
- Solar Inverter
- Frequency converter
- Industrial power supply
| Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| WNSC2M1K0170J | VDS | drain-source voltage | 25 °C ≤ Tj ≤ 175 °C | 1700 | V | ||
| ID | drain current | VGS = 18 V; Tmb = 25 °C | 4.6 | A | |||
| Ptot | total power dissipation | Tmb = 25 °C | 34 | W | |||
| Tj | junction temperature | -55 | 175 | °C | |||
| RDS(on) | drain-source on-state resistance | VGS = 15 V; ID = 1 A; Tj = 25 °C | 1000 | mΩ | |||
| QG(tot) | total gate charge | ID = 2 A; VDS = 1200 V; VGS = 0 V/18 V; Tj = 25 °C | 12 | nC | |||
| QGD | gate-drain charge | 5 | nC | ||||
| Qr | recovered charge | ISD = 1 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C | 38 | nC |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| WNSC2M1K0170J |
SOT1293 |
HORIZONTAL, RAIL PACK | Volume production | Standard Marking | WNSC2M1K0170JQ | 9340 737 41127 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| WNSC2M1K0170J | 9340 737 41127 | WNSC2M1K0170JQ | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| WNSC2M1K0170J | WNSC2M1K0170JQ | WNSC2M1K0170J |   |
Chemical Content - WNSC2M1K0170J
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
