WNSC2M40140R

Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

Features and Benefits
  • Separate driver source pin
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • 100% UIS Tested
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Applications
  • Switching mode power supplies
  • UPS & Energy storage system
  • Battery formation instrument
  • PV MPPT and inverters
  • EV charger
  • Motor Drives
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WNSC2M40140R VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1400 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     91 A
Ptot  total power dissipation  Tmb = 25 °C     556 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 33 A; Tj = 25 °C   40  
QG(tot)  total gate charge  ID = 33 A; VDS = 800 V; VGS = -4 V/18 V; Tj = 25 °C   115   nC
QGD  gate-drain charge   18   nC
Qr  recovered charge  ISD = 33 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   174   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2M40140R

TO247-4L

WNSC2M40140R,STANDARD MARKING * HORIZONTAL, RAIL PACKVolume productionStandard MarkingWNSC2M40140R6Q9340 741 68127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2M40140R9340 741 68127WNSC2M40140R6QNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2M40140RWNSC2M40140R6QWNSC2M40140RLeaded  DAlways Pb-free

Chemical Content - WNSC2M40140R

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.