WNSC5D12650Y
Silicon Carbide Schottky diode in a IITO220-2L plastic package, designed for high frequency switched-mode power supplies.
Features and Benefits
- Highly stable switching performance
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS compliant
Applications
• Power factor correction
• Telecom / Server SMPS
• UPS
• PV inverter
• PC Silverbox
• LED / OLED TV
• Motor Drives
• Telecom / Server SMPS
• UPS
• PV inverter
• PC Silverbox
• LED / OLED TV
• Motor Drives
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
WNSC5D12650Y | VRRM | repetitive peak reverse voltage | 650 | V | |||
IF(AV) | average forward current | δ = 0.5; square-wave pulse; Tmb ≤ 76 °C | 12 | A | |||
Tj | junction temperature | -55 | 175 | °C | |||
VF | forward voltage | IF = 12 A; Tj = 25 °C | 1.45 | 1.70 | V | ||
Qr | reverse charge | IF = 12 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C | 18 | nC |