WNSC6D20650CW-A
Dual Silicon Carbide Schottky diode in a TO247 plastic package, designed for high frequency switched-mode power supplies.
Features and Benefits
- New 6th Generation Technology
- Low Forward Voltage Drop
- Low Reverse Leakage Current
- High Forward Surge Capability IFSM
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS compliant
- AEC-Q101 qualified
Applications
- Power factor correction
- Telecom / Server SMPS
- UPS
- PV inverter
- PC Silverbox
- LED / OLED TV
- Motor Drives
- On board charger
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
WNSC6D20650CW-A | VRRM | repetitive peak reverse voltage | 650 | V | |||
IO(AV) | average output current | δ = 0.5; square-wave pulse; Tmb ≤ 133 °C; both diodes conducting | 20 | A | |||
Tj | junction temperature | -55 | 175 | °C | |||
VF | forward voltage | IF = 10 A; Tj = 25 °C; per diode | 1.26 | 1.4 | V | ||
Qr | reverse charge | IF = 10 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; per diode | 24 | nC |