WNSC6D30650BT2-A

Silicon Carbide Schottky diode in a TO263-2L (D2PAK) plastic package, designed for high frequency switched-mode power supplies

Features and Benefits
  • New 6th Generation Technology
  • Low Forward Voltage Drop
  • Low Reverse Leakage Current
  • High Forward Surge Capability IFSM
  • Reduced losses in associated MOSFET
  • Reduced EMI • Reduced cooling requirements
  • RoHS compliant
  • AEC-Q101 qualified
Applications
  • EV On Board Chargers
  • EV DC-DC converters
  • Other EV HV systems

 

 

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC6D30650BT2-A VRRM  repetitive peak reverse voltage       650 V
IF  continuous forward current  Tmb ≤ 143 °C; DC     30 A
Tj  junction temperature   -55   175 °C
VF  forward voltage  IF = 30 A; Tj = 25 °C   1.26 1.40 V
Qr  reverse charge  IF = 30 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C   72   nC
Datasheet
Chemical Content

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.