WSJM65R260X
WSJM65R260X is a high voltage N-channel MOSFET in TO220F package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density
Features and Benefits
- Superior FOM RDS(on) * Qg
- Extremely low switching loss
- 100% avalanche tested
Applications
- Chargers
- Adapters
- Lighting
- Flyback topologies for high efficiency power supplies
Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
WSJM65R260X | VDS | drain-source voltage | 650 | V | |||
VGS | gate-source voltage | ±30 | V | ||||
ID | continuous drain current | Th = 25 °C | 17 | A | |||
Ptot | power dissipation | Th = 25 °C | 32 | W | |||
Tj | junction temperature | -55 | 150 | °C | |||
RDS(on) | drain-source on-state resistance | VGS = 10 V; ID = 7.5 A | 240 | 260 | mΩ | ||
QG(tot) | total gate charge | ID = 7.5 A; VDS = 400 V; VGS = 10 V | 26 | nC | |||
EOSS | coss stored erergy | VGS = 0 V; VDS = 0 to 400 V | 3.5 | μJ |