WSJM80R200

WSJM80R200 is a high voltage N-channel MOSFET in TO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

Features and Benefits
  • Superior FOM RDS(on) * Qg
  • Extremely low switching loss
  • 100% avalanche tested
Applications
  • Solar
  • LED power
  • Flyback topologies for high efficiency power supplies
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
WSJM80R200 VDS  drain-source voltage       800 V
VGS  gate-source voltage       ±30 V
ID  continuous drain current  Tmb = 25 °C     22 A
Ptot  power dissipation  Tmb = 25 °C     272 W
Tj  junction temperature   -55   150 °C
RDS(on)  drain-source on-state resistance  VGS = 10 V; ID = 10.5 A   180 200 mΩ
QG(tot)  total gate charge  ID = 10.5 A; VDS = 640 V; VGS = 10 V   52   nC
EOSS  coss stored erergy  VGS = 0 V; VDS = 0 to 640 V   11   μJ
Datasheet
Chemical Content

Chemical Content - WSJM80R200

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.