WSJM80R200B is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.
- Superior FOM RDS(on) * Qg
- Extremely low switching loss
- 100% avalanche tested
- Solar
- LED power
- Flyback topologies for high efficiency power supplies
| Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| WSJM80R200B | VDS | drain-source voltage | 800 | V | |||
| VGS | gate-source voltage | ±30 | V | ||||
| ID | continuous drain current | Tmb = 25 °C | 22 | A | |||
| Ptot | power dissipation | Tmb = 25 °C | 272 | W | |||
| Tj | junction temperature | -55 | 150 | °C | |||
| RDS(on) | drain-source on-state resistance | VGS = 10 V; ID = 10.5 A | 180 | 200 | mΩ | ||
| QG(tot) | total gate charge | ID = 10.5 A; VDS = 640 V; VGS = 10 V | 52 | nC | |||
| EOSS | coss stored erergy | VGS = 0 V; VDS = 0 to 640 V | 11 | μJ |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| WSJM80R200B |
TO263 |
STANDARD MARK SMD | Volume production | Standard Marking | WSJM80R200BJ | 9340 740 28118 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| WSJM80R200B | 9340 740 28118 | WSJM80R200BJ | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| WSJM80R200B | WSJM80R200BJ | WSJM80R200B |   |
Chemical Content - WSJM80R200B
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
