WTD100TBS12

Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.

Features and Benefits
  • Planar passivated thyristor chips for voltage ruggedness and reliability
  • Top-side cooling
  • Compact design
  • One screw mounting
  • Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DBC)
  • Package is RoHS compliant
Applications
  • UPS
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ Max Unit
WTD100TBS12 VDRM  repetitive peak off-state voltage       1200 V
VRRM  repetitive peak reverse voltage       1200 V
IT(RMS)  RMS on-state current  half sine wave     101 A
IF(AV)  average forward current  δ = 0.5; square-wave pulse     100 A
ITSM  non-repetitive peak on-state 
 current		  half sine wave; Tj(init) = 25 °C; tp = 10 ms     1500 A
 half sine wave; Tj(init) = 150 °C; tp = 10 ms     1350 A
 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms     1650 A
 half sine wave; Tj(init) = 150 °C; tp = 8.3 ms     1485 A
IGT  gate trigger current  VD = 12 V; IT = 0.1 A; Tj = 25 °C 30   100 mA
VGT  gate trigge voltage  VD = 12 V; IT = 0.1 A; Tj = 25 °C     1.50 V
VT  on-state voltage  IT = 200 A; Tj = 25 °C     1.70 V
VF  forward voltage  IF = 100 A; Tj = 25 °C   1.00  1.30 V
Datasheet
Chemical Content

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.