ACTT10B-800CTN

AC Thyristor Triac power switch in a TO263 (D2PAK) surface mountable plastic package with self-protective clamping capabilities against low and high energy transients. This "series CTN" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Features and Benefits
• Clamping structure ensuring safe high over-voltage withstand capability
• High junction operating temperature capability (Tj(max) = 150 °C)
• High minimum IGT for guaranteed immunity to gate noise
• Full cycle AC conduction
• Over-voltage withstand capability to IEC 61000-4-5
• Pin compatible with standard triacs
• Planar passivated for voltage ruggedness and reliability
• Protective self turn-on capability for high energy transients
• Safe clamping capability for low energy over-voltage transients
• Less sensitive gate for high noise immunity
• Surface mountable package
• Triggering in three quadrants only
• Very high immunity to false turn-on by dV/dt and IEC 61000-4-4 fast transient
• Package meets UL94V0 flammability requirement
• Package is RoHS compliant
Applications
• AC fan, pump and compressor controls
• Highly inductive, resistive and safety loads
• Large and small appliances (White Goods)
• Reversing induction motor controls
• Applications subject to high temperature (Tj(max) = 150 °C)
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
ACTT10B-800CTN VDRM         800 V
IT(RMS) RMS on-state current square-wave pulse; Tmb ≤ 126 °C; Fig. 1; Fig. 2; Fig. 3     10 A
ITSM non-repetitive peak on-state current full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5     90  
non-repetitive peak forward current full sine wave; tp = 16.7 ms; Tj(init) = 25 °C;     99  
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+ Tj = 25 °C; Fig. 7 5   35 mA
VD = 12 V; IT = 0.1 A; T2+ GTj = 25 °C; Fig. 7 5   35 mA
VD = 12 V; IT = 0.1 A; T2- GTj = 25 °C; Fig. 7 5   35 mA
IH holding current VD = 12 V; Tj = 25 °C; Fig. 9     30 mA
Vt on-state voltage IT = 14 A; Tj = 25 °C; Fig. 10     1.5 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 2000     V/μs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 20 V/μs; gate open circuit; snubberless condition 5     A/ms
Datasheet
Chemical Content

Chemical Content - ACTT10B-800CTN

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