ACTT8X-800C0T
Planar passivated AC Thyristor Triac power switch in a SOT186A (TO-220F) "full pack" plastic package with self-protective capabilities against low and high energy transients. This "series C0T" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max)] = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.
Features and Benefits
- Clamping structure ensuring safe high over-voltage withstand capability
- High junction operating temperature capability
- High minimum IGT for guaranteed immunity to gate noise
- Full cycle AC conduction
- Isolated mounting base package
- Less sensitive gate for high noise immunity
- Over-voltage withstand capability to IEC 61000-4-5
- Pin compatible with standard triacs
- Planar passivated for voltage ruggedness and reliability
- Safe clamping capability for low energy over-voltage transients
- Self-protective turn-on during high energy voltage transients
- Triggering in three quadrants only
- Very high immunity to false turn-on by dV/dt
Applications
- AC fan, pump and compressor controls
- Highly inductive, resistive and safety loads
- Large and small appliances (White Goods)
- Reversing induction motor controls
- Applications subject to high temperature
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
ACTT8X-800C0T | VDRM | repetitive peak off-state voltage | 800 | V | |||
IT(RMS) | RMS on-state current | full sine wave; Th ≤ 104 °C | 8 | A | |||
ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 20 ms | 80 | A | |||
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 88 | A | |||||
Tj | junction temperature | 150 | °C | ||||
VPP | peak pulse voltage | Tj = 25 °C; non-repetitive, off-state | 2 | kV | |||
IGT | gate trigger current | VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C | 5 | 30 | mA | ||
VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C | 5 | 30 | mA | ||||
VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C | 5 | 30 | mA | ||||
IH | holding current | VD = 12 V; Tj = 25 °C | 35 | mA | |||
VT | on-state voltage | IT = 10 A; Tj = 25 °C | 1.3 | 1.5 | V | ||
VCL | clamping voltage | ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C | 850 | V | |||
dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 600 | V/µs | |||
dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit | 3 | A/ms |