BT137-800G0

Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications.

Features and Benefits
  • High blocking voltage capability
  • Least sensitive gate for highest noise immunity
  • High minimum IGT for guaranteed immunity to gate noise
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in all four quadrants
Applications
  • General purpose motor controls
  • Lighting controls
  • Applications where only positive gate drive is avaliable
  • Applications where gate noise or interference may occur
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BT137-800G0 VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 °C     8 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     65 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     71 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 10   50 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 10   50 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 10   50 mA
VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C 10   100 mA
IH holding current VD = 12 V; Tj = 25 °C     40 mA
VT on-state voltage IT = 10 A; Tj = 25 °C   1.3 1.65 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 200     V/µs
dVcom/dt rate of change of commutating voltage VD = 400 V; Tj = 95 °C; dIcom/dt = 3.6 A/ms; IT = 8 A; gate open circuit 10     V/µs
Datasheet
Chemical Content

Chemical Content - BT137-800G0

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