BT137-800G0T

Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications. It is used in applications where "high junction operating temperature capability" is required, the maximum rated junction temperature is 150 °C.

Features and Benefits
  • High blocking voltage capability
  • Least sensitive gate for highest noise immunity
  • High junction operating temperature capability
  • High minimum IGT for guaranteed immunity to gate noise
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in all four quadrants
Applications
  • Applications subject to high temperature
  • General purpose motor controls
  • Lighting controls
  • Applications where only positive gate drive is avaliable
  • Applications where gate noise or interference may occur
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BT137-800G0T VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 127 °C     8 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     65 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     71 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 10   50 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 10   50 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 10   50 mA
VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C 10   100 mA
IH holding current VD = 12 V; Tj = 25 °C     40 mA
VT on-state voltage IT = 10 A; Tj = 25 °C   1.3 1.65 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 200     V/µs
dVcom/dt rate of change of commutating voltage VD = 400 V; Tj = 150 °C; dIcom/dt = 3.6 A/ms; IT = 8 A; gate open circuit 10     V/µs
Datasheet
Chemical Content

Chemical Content - BT137-800G0T

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