BT139B-800F

Planar passivated four quadrant triac in a TO263 (D2PAK) surface-mountable plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

Features and Benefits
  • High blocking voltage capability
  • Less sensitive gate for improved noise immunity
  • Planar passivated for voltage ruggedness and reliability
  • Surface-mountable package
  • Triggering in all four quadrants
Applications
  • General purpose motor control
  • General purpose switching
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BT139B-800F VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C     16 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     155 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     170 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C   5 25 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C   8 25 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C   10 25 mA
VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C   22 70 mA
IH holding current VD = 12 V; Tj = 25 °C   6 45 mA
VT on-state voltage IT = 20 A; Tj = 25 °C   1.2 1.6 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 50 250   V/µs
dVcom/dt rate of change of commutating voltage VD = 400 V; Tj = 95 °C; dIcom/dt = 7.2 A/ms; IT = 16 A; gate open circuit   20   V/µs
Datasheet
Chemical Content

Chemical Content - BT139B-800F

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