BT145-800RT
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic package intended for use in applications requiring high bidirectional blocking voltage capability, high current inrush capability and high thermal cycling performance.
Features and Benefits
• AC power control
• High bidirectional blocking voltage capability
• High thermal cycling performance
• Planar passivated for voltage ruggedness and reliability
• High junction operating temperature capability (Tj(max) = 150 °C)
• Package meets UL94V0 flammability requirement
• Package is RoHS compliant
• IEC 61000-4-4 fast transient
Applications
• Capacitive Discharge Ignition (CDI)
• Crowbar protection
• Inrush protection
• Motor control
• Voltage regulation
• High junction operating temperature capability (Tj(max) = 150 °C)
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BT145-800RT | VDRM | repetitive peak offstate voltage | 800 | V | |||
IT(RMS) | RMS on-state current | half sine wave; Tmb≤ 128°C; Fig. 1; Fig. 2; Fig. 3 | 25 | A | |||
ITSM | non-repetitive peak on-state current | half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 | 300 | A | |||
non-repetitive peak forward current | half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 330 | A | ||||
Tj | junction temperature | 150 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 | 1.5 | 10 | mA | ||
IH | holding current | VD = 12 V; Tj = 25 °C; Fig. 9 | 60 | mA | |||
VT | on-state voltage | IT = 30 A; Tj = 25 °C; Fig. 10 | 1.1 | 1.5 | V | ||
dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 80 | V/μs |