BT151-1000RT
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance.
Features and Benefits
- High junction operating temperature capability
- High thermal cycling performance
- Planar passivated for voltage ruggedness and reliability
- Very high bidirectional blocking voltage capability
Applications
- Capacitive Discharge Ignition (CDI)
- Crowbar protection
- Inrush protection
- Motor control
- Voltage regulation
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BT151-1000RT | VDRM | repetitive peak off-state voltage | 1000 | V | |||
VRRM | repetitive peak reverse voltage | 1000 | V | ||||
IT(AV) | average on-state current | half sine wave; Tmb ≤ 134 °C | 7.5 | A | |||
IT(RMS) | RMS on-state current | half sine wave; Tmb ≤ 134 °C | 12 | A | |||
ITSM | non-repetitive peak on-state current | half sine wave; Tj(init) = 25 °C; tp = 10 ms | 120 | A | |||
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 132 | A | |||||
Tj | junction temperature | 150 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 2 | 15 | mA | ||
IL | latching current | VD = 12 V; IG = 0.1 A; Tj = 25 °C | 10 | 40 | mA | ||
IH | holding current | VD = 12 V; Tj = 25 °C | 7 | 20 | mA | ||
dVD/dt | rate of rise of off-state voltage | VDM = 670 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 300 | V/µs |