BT258-800R

Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Features and Benefits
  • High blocking voltage suitable for high voltage applications
  • Sensitive gate suitable for logic level controls
Applications
  • General purpose switching
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BT258-800R VDRM repetitive peak off-state voltage       800 V
VRRM repetitive peak reverse voltage       800 V
IT(AV) average on-state current half sine wave; Tmb ≤ 111 °C     5 A
IT(RMS) RMS on-state current half sine wave; Tmb ≤ 111 °C     8 A
ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 10 ms     75 A
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms     82 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C   50 200 µA
IL latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C   0.4 10 mA
IH holding current VD = 12 V; Tj = 25 °C   0.3 6 mA
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; RGK = 100 μ; (VDM = 67% of VDRM); exponential waveform 50 100   V/µs
Datasheet
Chemical Content

Chemical Content - BT258-800R

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Disclaimer

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