BT258X-800R
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Features and Benefits
- Direct interfacing with low power drivers and microcontrollers
- High bidirectional blocking voltage capability
- High thermal cycling performance
- Isolated mounting base package
- Planar passivated for voltage ruggedness and reliability
- Sensitive gate suitable for logic level controls
Applications
- Capacitive Discharge Ignition (CDI)
- Crowbar protection
- Inrush protection
- Motor control
- Voltage regulation
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BT258X-800R | VDRM | repetitive peak off-state voltage | 800 | V | |||
VRRM | repetitive peak reverse voltage | 800 | V | ||||
IT(AV) | average on-state current | half sine wave; Th ≤ 90 °C | 5 | A | |||
IT(RMS) | RMS on-state current | half sine wave; Th ≤ 90 °C | 8 | A | |||
ITSM | non-repetitive peak on-state current | half sine wave; Tj(init) = 25 °C; tp = 10 ms | 75 | A | |||
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 82 | A | |||||
Tj | junction temperature | 125 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 50 | 200 | µA | ||
IL | latching current | VD = 12 V; IG = 0.1 A; Tj = 25 °C | 0.4 | 10 | mA | ||
IH | holding current | VD = 12 V; Tj = 25 °C | 0.3 | 6 | mA | ||
dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; RGK = 100 μ; (VDM = 67% of VDRM); exponential waveform | 50 | 100 | V/µs |