BTA308X-800F0

Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package. This triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dV/dt as well as high dIcom/dt can occur. This "series F0" triac will commutate the full rated RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber.

Features and Benefits
  • 3Q technology for improved noise immunity
  • High commutation capability with maximum false trigger immunity
  • High immunity to false turn-on by dV/dt
  • Isolated mounting base package
  • High junction operating temperature capability (Tj(max) = 150 °C)
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only
  • High voltage capability
  • Optimized for highest noise immunity
Applications
  • Compressor starting control circuits
  • General purpose motor controls
  • Reversing induction motor controls e.g. vertical axis washing machines
  • Applications subject to high temperature (Tj(max) = 150 °C)
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA308X-800F0 VDRM repetitive peak offstate voltage       800 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 106 °C;     8 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5     60 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; 5   20 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; 5   20 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; 5   20 mA
IH holding current VD = 12 V; Tj = 25 °C;     50 mA
VT on-state voltage IT = 10 A; Tj = 25 °C;   1.3 1.65 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500     V/μs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; dVcom/dt = 20 V/μs; (snubberless condition); gate open circuit; 6     A/ms
Datasheet
Chemical Content

Chemical Content - BTA308X-800F0

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