BTA310-800D
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package. This "series D" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers including microcontrollers.
Features and Benefits
- 3Q technology for improved noise immunity
- Direct interfacing with low power drivers and microcontrollers
- Good immunity to false turn-on by dV/dt
- High commutation capability with very sensitive gate
- High voltage capability
- Planar passivated for voltage ruggedness and reliability
- Triggering in three quadrants only
- Very sensitive gate for easy logic level triggering
Applications
- Electronic thermostats (heating and cooling)
- Motor controls e.g. washing machines and vacuum cleaners
- Refrigeration and air-conditioner compressor controls
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BTA310-800D | VDRM | repetitive peak off-state voltage | 800 | V | |||
IT(RMS) | RMS on-state current | full sine wave; Tmb ≤ 106 °C | 10 | A | |||
ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 20 ms | 85 | A | |||
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 93 | A | |||||
Tj | junction temperature | 125 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C | 0.3 | 5 | mA | ||
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C | 0.3 | 5 | mA | ||||
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C | 0.3 | 5 | mA | ||||
IH | holding current | VD = 12 V; Tj = 25 °C | 10 | mA | |||
VT | on-state voltage | IT = 12 A; Tj = 25 °C | 1.25 | 1.5 | V | ||
dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 20 | V/µs | |||
dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit | 1 | A/ms | |||
VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A; dVcom/dt = 10 V/µs; gate open circuit | 1.5 | A/ms | |||||
VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A; dVcom/dt = 1 V/µs; gate open circuit | 4.5 | A/ms |