BTA312B-800E

Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plastic package. This "series E" triac balances the requirements of commutation performance and gate sensitivity. The "sensitive gate" "series E" is intended for interfacing with low power drivers including microcontrollers.

Features and Benefits
  • 3Q technology for improved noise immunity
  • Direct interfacing with low power drivers and microcontrollers
  • Good immunity to false turn-on by dV/dt
  • High commutation capability with sensitive gate
  • High voltage capability
  • Planar passivated for voltage ruggedness and reliability
  • Sensitive gate for easy logic level triggering
  • Surface mountable package
  • Triggering in three quadrants only
Applications
  • Electronic thermostats (heating and cooling)
  • High power motor controls e.g. washing machines and vacuum cleaners
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA312B-800E VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 100 °C     12 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     100 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     110 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 2   10 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 2   10 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 2   10 mA
IH holding current VD = 12 V; Tj = 25 °C     15 mA
VT on-state voltage IT = 15 A; Tj = 25 °C   1.3 1.6 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 50     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 3     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A; dVcom/dt = 10 V/µs; gate open circuit 6     A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A; dVcom/dt = 1 V/µs; gate open circuit 10     A/ms
Datasheet
Chemical Content

Chemical Content - BTA312B-800E

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